返回菜单
200mm
\r\n
ABATEMENT
\r\n
ACTIVE MATRIX OLED DISPLAY (AMOLED)
\r\nADVANCED PROCESS CONTROL (APC)
\r\nALPS (ADVANCED LOW-PRESSURE SOURCE)
\r\nALTERNATING APERTURE PHASE SHIFT MASK (AAPSM or alt-APSM)
\r\nAOI (AUTOMATED OPTICAL INSPECTION)
\r\nAPC (AUTOMATED PROCESS CONTROL)
\r\nAPF (ADVANCED PATTERNING FILMS)
\r\nASC (AUTOMATED SCREEN CLEANER)
\r\nATTENUATED PHASE SHIFT MASK (APSM)
\r\n
AUTOMATED MATERIAL HANDLING SYSTEM (AMHS)
\r\nAUTOMATIC DEFECT CLASSIFICATION (ADC)
\r\nBIVP (BUILDING-INTEGRATED PHOTOVOLTAICS)
\r\nBPSG (BOROPHOSPHOSILICATE GLASS)
\r\nCAPACITANCE
\r\n
CD-SEM (CRITICAL DIMENSION SCANNING ELECTRON MICROSCOPE)
\r\nCDU (CRITICAL DIMENSION UNIFORMITY)
\r\nComputational Fluid Dynamics, a branch of fluid mechanics that uses numerical methods and algorithms to solve and analyze problems that involve fluid flows,
\r\n\r\n\r\nCMOS (COMPLEMENTARY METAL OXIDE SEMICONDUCTOR)
\r\nCMP (CHEMICAL MECHANICAL PLANARIZATION)
\r\nCOMPUTER INTEGRATED MANUFACTURING (CIM)
\r\nCRYSTALLINE SILICON (c-Si)
\r\n
CVD (CHEMICAL VAPOR DEPOSITION)
\r\n计算流体力学是流体力学的一个分支,它使用数值方法和算法来解决和分析涉及流体流动的问题,
DARC (DIELECTRIC ANTI-REFLECTIVE COATING)
\r\nDEFECT REVIEW SCANNING ELECTRON MICROSCOPE (DR-SEM)
\r\n
DPN (DECOUPLED PLASMA NITRIDATION)
\r\nECA (ELECTRICALLY CONDUCTIVE ADHESIVE)
\r\nELECTROCHEMICAL DEPOSITION (ECD)
\r\nELECTROMAGNETIC INTERFERENCE (EMI)
\r\nENERGY PURITY MODULE (EPM)
\r\n
EOT (EQUIVALENT OXIDE THICKNESS)
\r\nEPT (EQUIPMENT PERFORMANCE TRACKING)
\r\nEUVL (EXTREME ULTRAVIOLET LITHOGRAPHY)
\r\nFDC (FAULT DETECTION AND CLASSIFICATION)
\r\nFORWARD VOLTAGE
\r\n
FRONT OPENING UNIFIED POD (FOUP)
\r\n
FSG (FLUORINE-DOPED SILICATE GLASS)
\r\nGeneration | \r\nTypical dimensions (mm) | \r\nArea (m²) | \r\nIntroduced | \r\n
Gen 2 \r\n | \r\n400 x 500 \r\n | \r\n0.2 \r\n | \r\n1993 \r\n | \r\n
Gen 3 \r\n | \r\n620 x 750 \r\n | \r\n0.5 \r\n | \r\n1995 \r\n | \r\n
Gen 4 \r\n | \r\n730 x 920 \r\n | \r\n0.7 \r\n | \r\n2000 \r\n | \r\n
Gen 5 \r\n | \r\n1,000 x 1,200 | \r\n1.2 | \r\n2002 \r\n | \r\n
Gen 5.5 \r\n | \r\n1,300 x 1,500 \r\n | \r\n2.0 \r\n | \r\n2004 \r\n | \r\n
Gen 6 \r\n | \r\n1,500 x 1,850 \r\n | \r\n2.8 \r\n | \r\n2003 \r\n | \r\n
Gen 7 \r\n | \r\n1,870 x 2,200 \r\n | \r\n4.1 \r\n | \r\n2004 \r\n | \r\n
Gen 7.5 \r\n | \r\n1,950 x 2,250 \r\n | \r\n4.4 \r\n | \r\n2005 \r\n | \r\n
Gen 8 \r\n | \r\n2,160 x 2,460 \r\n | \r\n5.3 \r\n | \r\n2006 \r\n | \r\n
Gen 8.5 \r\n | \r\n2,200 x 2,500 \r\n | \r\n5.7 \r\n | \r\n2007 \r\n | \r\n
Gen 10 \r\n | \r\n2,880 x 3,130 \r\n | \r\n9.0 \r\n | \r\n2008 \r\n | \r\n
GRAYFIELD/GREYFIELD INSPECTION
\r\n一代 | 典型尺寸(mm) | 面积(m²) | 介绍了 |
创2 |
400 x 500 |
0.2 |
1993 |
创3 |
620 x 750 |
0.5 |
1995 |
创4 |
730 x 920 |
0.7 |
2000 |
创5 |
1,000 x 1,200 |
1.2 |
2002 |
创5.5 |
1300 x 1500 |
2.0 |
2004 |
创6 |
1,500 x 1,850 |
2.8 |
2003 |
创7 |
1870 x 2200 |
4.1 |
2004 |
创7.5 |
1,950 x 2,250 |
4.4 |
2005 |
创8 |
2160 x 2460 |
5.3 |
2006 |
创8.5 |
2,200 x 2,500 |
5.7 |
2007 |
创10 |
2880 x 3130 |
9.0 |
2008 |
HDP-CVD (HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION)
\r\nICP (INDUCTIVELY COUPLED PLASMA)
\r\nIGZO (INDIUM GALLIUM ZINC OXIDE)
\r\nThe examination of a wafer to detect defects of various types (e.g., scratches, particles, damaged features) following each step in the semiconductor fabrication process flow.
\r\n\r\n\r\nINTERLAYER DIELECTRIC (ILD)
\r\n
在半导体制造工艺流程的每一步之后,对晶圆片进行检查,以检测各种类型的缺陷(如划痕、颗粒、损坏的特征)。
JUNCTION BOX
\r\n
LIQUID CRYSTAL DISPLAY (LCD)
\r\n
\r\nLOGIC
LSI (LARGE SCALE INTEGRATION)
\r\n
LTPS (LOW TEMPERATURE POLYSILICON)
\r\n
\r\nMEMORY
\r\n
MEMS (MICROELECTROMECHANICAL SYSTEMS)
\r\nMES (MANUFACTURING EXECUTION SYSTEM)
\r\nMICRO-CRYSTALLINE SILICON (µc-Si)
\r\n
MOCVD (METAL-ORGANIC CHEMICAL VAPOR DEPOSITION)
\r\nMOS (METAL OXIDE SEMICONDUCTOR)
\r\nOPTICAL PROXIMITY CORRECTION (OPC)
\r\nORGANIC LIGHT EMITTING DIODE (OLED)
\r\nPECVD (PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION)
\r\nPERC (PASSIVATED EMITTER REAR CONTACT)
\r\nPHOSPHORUS-DOPED SILICATE GLASS (PSG)
\r\n
PROJECTED CAPACITANCE TOUCH (PCT)
\r\nPVD (PHYSICAL VAPOR DEPOSITION)
\r\nRAPID THERMAL PROCESSING (RTP)
\r\nRENEWABLE ENERGY STANDARD (RES)
\r\n
RENEWABLE PORTFOLIO STANDARD (RPS)
\r\n
SACVD (SUB-ATMOSPHERIC CHEMICAL VAPOR DEPOSITION)
\r\nSADP (SELF-ALIGNED DOUBLE PATTERNING)
\r\nSAQP (SELF-ALIGNED QUADRUPLE PATTERNING)
\r\nSCANNING ELECTRON MICROSCOPE (SEM)
\r\n
SECS/GEM (SEMI EQUIPMENT COMMUNICATION STANDARD/GENERIC EQUIPMENT MODEL)
\r\n
SMO (SOURCE-MASK OPTIMIZATION)
\r\nSPC (STATISTICAL PROCESS CONTROL)
\r\nSRAM (STATIC RANDOM ACCESS MEMORY)
\r\nSTI (SHALLOW TRENCH ISOLATION)
\r\nTCO (TRANSPARENT CONDUCTIVE OXIDE)
\r\nTEM (TRANSMISSION ELECTRON MICROSCOPE)
\r\nTFT-LCD (THIN-FILM TRANSISTOR LIQUID CRYSTAL DISPLAY)
\r\nTHIN FILM
\r\n
TURBOMOLECULAR PUMP (TURBO PUMP)
\r\n
VLSI (VERY LARGE SCALE INTEGRATION)
\r\n